• DocumentCode
    3552505
  • Title

    Characteristics of Schottky junctions on H2- and PH3-plasma treated InP

  • Author

    Sugino, Takashi ; Amamoto, Hiroyuki Y. ; Amada, Takashi Y. ; Ninomiya, Hideaki ; Sakamoto, Y. Oshifumi ; Matsuda, Koichiro ; Shirafuji, Junji

  • Author_Institution
    Dept. of Electr. Eng., Osaka Univ., Japan
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    626
  • Lastpage
    629
  • Abstract
    Effects of H2 and PH3 plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H2 and PH3 plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H2 plasma treatment. These traps are not observed in the case of PH3 plasma treatment
  • Keywords
    III-V semiconductors; Schottky effect; deep levels; indium compounds; interface electron states; passivation; semiconductor-metal boundaries; Au-InP; H2 plasma treatment; III-V semiconductor; InP; PH3 plasma treatment; Schottky junctions; barrier heights; deep levels; passivation; surface Fermi level pinning; surface treatment; thin oxide film; Gold; Hydrogen; Indium phosphide; Inductors; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Plasma simulation; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147453
  • Filename
    147453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552505