Title :
Characteristics of Schottky junctions on H2- and PH3-plasma treated InP
Author :
Sugino, Takashi ; Amamoto, Hiroyuki Y. ; Amada, Takashi Y. ; Ninomiya, Hideaki ; Sakamoto, Y. Oshifumi ; Matsuda, Koichiro ; Shirafuji, Junji
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
Effects of H2 and PH3 plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H2 and PH3 plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H2 plasma treatment. These traps are not observed in the case of PH3 plasma treatment
Keywords :
III-V semiconductors; Schottky effect; deep levels; indium compounds; interface electron states; passivation; semiconductor-metal boundaries; Au-InP; H2 plasma treatment; III-V semiconductor; InP; PH3 plasma treatment; Schottky junctions; barrier heights; deep levels; passivation; surface Fermi level pinning; surface treatment; thin oxide film; Gold; Hydrogen; Indium phosphide; Inductors; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Plasma simulation; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147453
