• DocumentCode
    3552508
  • Title

    A glass dielectric isolation technique

  • Author

    Price, W.L. ; Fordemwalt, J.N.

  • Volume
    12
  • fYear
    1966
  • fDate
    1966
  • Firstpage
    68
  • Lastpage
    68
  • Abstract
    A new approach to dielectric isolation for integrated circuits utilizes a thick layer of a glass (approximately 25 microns) to replace the thin (approximately 1 micron) layer of silicon dioxide which is commonly used as the dielectric medium. This glass layer reduces the inter-device coupling capacitance, increases the dielectric breakdown voltage, and lessens the likelihood of inter-device shorting.
  • Keywords
    Capacitance; Coupling circuits; Crystallization; Dielectrics; Diffusion bonding; Gettering; Glass; Impurities; P-n junctions; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1966 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1966.187693
  • Filename
    1474532