Title :
Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces
Author :
Hasegawa, Hideki ; Akazawa, Masamichi ; Ohue, Eiji
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
The growth of a surface passivation structure for In0.53Ga0.47As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO2 layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; passivation; III-V semiconductor; InGaAs; InGaAs surfaces; MBE elemental semiconductor layer; Si interface control layer; air-exposed surfaces; surface passivation structure; ultrahigh vacuum system; Chemical processes; Chemical technology; Etching; Hafnium; Indium gallium arsenide; Molecular beam epitaxial growth; Optical surface waves; Passivation; Substrates; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147454
