DocumentCode :
3552537
Title :
MOVPE growth of In-containing compounds by new TMI supply system
Author :
Hidaka, Jun-ichi ; Yamaguchi, Akira ; Hirahara, Kazuhiro
Author_Institution :
Nippon Sanso Corp., Kawasaki, Japan
fYear :
1991
fDate :
8-11 Apr 1991
Firstpage :
640
Lastpage :
643
Abstract :
A system to supply trimethylindium (TMI) developed for low-pressure metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAs and InP is described. Using the system, the stability in TMI supply was improved and fluctuation was minimized to ±0.4%. This makes fine control of a lattice constant possible. High-purity InP with a carrier concentration of 7.5×1014 cm-3 and mobility of 248000 cm-2/V-s at 77 K was successfully grown. The contamination from the system was extremely low
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V semiconductors; InGaAs; InP; MOVPE growth; carrier concentration; carrier mobility; lattice constant control; low contamination; trimethylindium supply system; Contamination; Epitaxial growth; Epitaxial layers; Filters; Fluctuations; Indium gallium arsenide; Indium phosphide; Ovens; Solids; Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
Type :
conf
DOI :
10.1109/ICIPRM.1991.147456
Filename :
147456
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3552537
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