• DocumentCode
    3552538
  • Title

    Charge control of field effect transistors

  • Author

    Hower, P.L. ; Gibbons, J.F.

  • Volume
    12
  • fYear
    1966
  • fDate
    1966
  • Firstpage
    100
  • Lastpage
    100
  • Abstract
    The drain current of a junction field effect transistor can be directly related to the charge on the gate terminal. For a device operating in the saturated region, the drain current is very nearly a linear function of the gate charge. As a result, if the conventional drain characteristics are re-drawn with curves of constant gate charge replacing curves of constant gate voltage, the characteristic curves will become uniformly spaced for equal increments in gate charge. This characterization can be useful to both user and designer of junction FET´s.
  • Keywords
    Charge measurement; Current measurement; Equations; FETs; Inorganic materials; Metal-insulator structures; Piezoelectric films; Piezoelectric transducers; Semiconductor materials; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1966 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1966.187721
  • Filename
    1474560