DocumentCode
3552538
Title
Charge control of field effect transistors
Author
Hower, P.L. ; Gibbons, J.F.
Volume
12
fYear
1966
fDate
1966
Firstpage
100
Lastpage
100
Abstract
The drain current of a junction field effect transistor can be directly related to the charge on the gate terminal. For a device operating in the saturated region, the drain current is very nearly a linear function of the gate charge. As a result, if the conventional drain characteristics are re-drawn with curves of constant gate charge replacing curves of constant gate voltage, the characteristic curves will become uniformly spaced for equal increments in gate charge. This characterization can be useful to both user and designer of junction FET´s.
Keywords
Charge measurement; Current measurement; Equations; FETs; Inorganic materials; Metal-insulator structures; Piezoelectric films; Piezoelectric transducers; Semiconductor materials; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1966 International
Type
conf
DOI
10.1109/IEDM.1966.187721
Filename
1474560
Link To Document