Title :
Fundamental revisions to the MOSFET device equations
Author :
Mize, J.P. ; Colman, D. ; Mize, J.P. ; Colman, D.
Author_Institution :
Texas Instruments, Inc., Dallas, Texas
Abstract :
Hole mobility in a MOSFET channel layer varies significantly with gate voltage and crystalline orientation. The basic device equations are therefore revised in this investigation to take nonconstant mobility into account. Hole mobility in silicon P-type inversion layers has been measured for wide ranges of temperature and gate voltage, and for the
Keywords :
Crystallization; Current measurement; Equations; FETs; Instruments; MOSFET circuits; Metal-insulator structures; Piezoelectric transducers; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 1966 International
DOI :
10.1109/IEDM.1966.187722
