MOCVD growth on nonplanar substrate for high performance monolithic integration of a buried ridge stripe DFB laser butt-joint to a passive waveguide

Author

Hornung, Vinciane ; Remiens, Denis ; Robein, Pidier ; Gloukhian, André ; Landreau, Jean

Author_Institution

CNET, Bagneux, France

fYear

1991

fDate

8-11 Apr 1991

Firstpage

644

Lastpage

647

Abstract

An application of nonplanar metalorganic chemical vapor deposition (MOCVD) growth to the monolithic integration of a buried ridge stripe (BRS) type distributed feedback (DFB) laser and a passive waveguide is described. The vapor phase properties have been used to butt-join a passive guide layer and an active laser layer grown successively, without growth pause. CW threshold currents as low as 17 mA have been achieved for a 1.3 mm long monolithic device. The coupling coefficient is in excess of 60%

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 17 mA; CW threshold currents; III-V semiconductors; InGaAsP-InP; MOCVD growth; active laser layer; buried ridge stripe DFB laser butt-joint; buried ridge stripe type laser; coupling coefficient; high performance monolithic integration; nonplanar substrate; passive waveguide; photonic IC; single step epitaxy; Epitaxial growth; Etching; Gratings; MOCVD; Monolithic integrated circuits; Optical device fabrication; Optical waveguides; Substrates; Waveguide components; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147457

Filename

147457