Title :
MOCVD growth on nonplanar substrate for high performance monolithic integration of a buried ridge stripe DFB laser butt-joint to a passive waveguide
Author :
Hornung, Vinciane ; Remiens, Denis ; Robein, Pidier ; Gloukhian, André ; Landreau, Jean
Author_Institution :
CNET, Bagneux, France
Abstract :
An application of nonplanar metalorganic chemical vapor deposition (MOCVD) growth to the monolithic integration of a buried ridge stripe (BRS) type distributed feedback (DFB) laser and a passive waveguide is described. The vapor phase properties have been used to butt-join a passive guide layer and an active laser layer grown successively, without growth pause. CW threshold currents as low as 17 mA have been achieved for a 1.3 mm long monolithic device. The coupling coefficient is in excess of 60%
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 17 mA; CW threshold currents; III-V semiconductors; InGaAsP-InP; MOCVD growth; active laser layer; buried ridge stripe DFB laser butt-joint; buried ridge stripe type laser; coupling coefficient; high performance monolithic integration; nonplanar substrate; passive waveguide; photonic IC; single step epitaxy; Epitaxial growth; Etching; Gratings; MOCVD; Monolithic integrated circuits; Optical device fabrication; Optical waveguides; Substrates; Waveguide components; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147457
