DocumentCode
3552551
Title
A 9 GHz silicon monolithic integrated TR switching circuit
Author
Ertel, Alfred
Author_Institution
Texas Instruments, Inc., Dallas, Texas.
Volume
12
fYear
1966
fDate
1966
Firstpage
110
Lastpage
110
Abstract
A silicon monolithic integrated antenna TR switching circuit has been developed for operation at 9 GHz as part of a program for the investigation of Molecular Electronics for Radar Applications (MERA). The circuit is on a silicon chip 10 mils thick and 100 mils square. It consists of a microwave microstrip transmission line containing surface oriented diodes which alternately switch a transmitted or received signal to or from an antenna leg. Bias is supplied to the switching diodes through quarter wavelength meander line chokes which are by-passed to ground by thin film capacitors. The diode structures provide greater than 25 db of isolation between the receive leg and the transmit leg at 9 GHz. A typical reverse bias capacitance for these diodes is 0.008 pF.
Keywords
Diodes; Distributed parameter circuits; Leg; Microstrip antennas; Molecular electronics; Radar antennas; Radar applications; Silicon; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1966 International
Type
conf
DOI
10.1109/IEDM.1966.187733
Filename
1474572
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