Title :
Impurity effects on generation and motion of dislocations in InP
Author :
Yonenaga, Ichiro ; Sumino, Koji
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
Effects of impurities on the dynamic activities of dislocations in InP are discussed. It is shown that S impurity enhances the motion of α dislocations and retards the motion of β and screw dislocations. Zn impurity strongly retards the motion of all types of dislocations. Ga and As impurities have little effect on the mobilities of dislocations, but strongly suppress the generation of α dislocations
Keywords :
III-V semiconductors; dislocation etching; dislocation motion; impurity-dislocation interactions; indium compounds; screw dislocations; α dislocations; III-V semiconductor; InP; InP:Ga,As; InP:S; InP:Zn; beta dislocations; dislocation generation; dynamic activities; etch pit observations; impurity effects; motion of dislocations; screw dislocations; Crystals; Etching; Fasteners; Gallium arsenide; Indium phosphide; Semiconductor impurities; Stress; Surface topography; Temperature distribution; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147458
