DocumentCode
3552559
Title
Impurity effects on generation and motion of dislocations in InP
Author
Yonenaga, Ichiro ; Sumino, Koji
Author_Institution
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
fYear
1991
fDate
8-11 Apr 1991
Firstpage
648
Lastpage
651
Abstract
Effects of impurities on the dynamic activities of dislocations in InP are discussed. It is shown that S impurity enhances the motion of α dislocations and retards the motion of β and screw dislocations. Zn impurity strongly retards the motion of all types of dislocations. Ga and As impurities have little effect on the mobilities of dislocations, but strongly suppress the generation of α dislocations
Keywords
III-V semiconductors; dislocation etching; dislocation motion; impurity-dislocation interactions; indium compounds; screw dislocations; α dislocations; III-V semiconductor; InP; InP:Ga,As; InP:S; InP:Zn; beta dislocations; dislocation generation; dynamic activities; etch pit observations; impurity effects; motion of dislocations; screw dislocations; Crystals; Etching; Fasteners; Gallium arsenide; Indium phosphide; Semiconductor impurities; Stress; Surface topography; Temperature distribution; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147458
Filename
147458
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