Non-equilibrium transport in ultra-fast InGaAs/InP heterostructure bipolar transistors

Author

Laskar, J. ; Nottenburg, R.N. ; Levi, A.F.J. ; Schmitt-Rink, S. ; Kolodzey, J. ; Humphrey, D.A. ; Hamm, R.A. ; Panish, M.B.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA

fYear

1991

fDate

8-11 Apr 1991

Firstpage

656

Lastpage

659

Abstract

The physics of non-equilibrium electron transport in ultra-fast InGaAs/InP heterojunction bipolar transistors (HBTs) is discussed. The forward transit delay was measured as a function of temperature from 340 K to 150 K. The small value of τ_F=0.28 ps at a lattice temperature of 150 K is due to the dominance of high velocity (υ~6×10^-7 cm-s^-1) Γ-valley electron transport in the base and collector. It is shown that optic-phonon and electron-electron scattering must be considered to properly describe the temperature dependence of electron transport in the collector

Keywords

III-V semiconductors; electron-phonon interactions; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; Γ-valley electron transport; 0.5 to 26.5 GHz; 340 to 150 K; III-V semiconductor; InGaAs-InP heterostructure; electron-electron scattering; forward transit delay; nonequilibrium transport; optic-phonon scattering; phonon-assisted intervalley transfer; temperature dependence; ultrafast HBT; Delay; Electrons; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lattices; Optical scattering; Physics; Temperature; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147460

Filename

147460