CcCompensated transistors

A device fabrication is presented which enables the gain band-width product realized in a differential amplifier topology to increase as much as five times over that available using conventional bipolar transistors. A bridge neutralization of collector depletion layer capacitance (Cc) is obtained by fabricating compensating positive feedback into a bipolar NPN transistor pair. The simultaneous fabrication of PN junction compensating capacitors in monolithic silicon enables the neutralization to be achieved for arbitrary bias and temperature conditions and over a wide frequency range.