DocumentCode
3552589
Title
High performance diffused InGaAs JFETs in OEICs
Author
Mansfield, C. ; Newson, D.J. ; Birdsall, P. ; Quayle, J.A.
Author_Institution
British Telecom Labs., Ipswich, UK
fYear
1991
fDate
8-11 Apr 1991
Firstpage
660
Lastpage
663
Abstract
The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; III-V semiconductor; JFET; PIN diodes; fabrication; high performance; highly uniform diffused InGaAs; receiver performance; ridge-waveguide lasers; vertically integrated optoelectronic integrated circuits; Doping; Epitaxial growth; FETs; Gate leakage; Indium gallium arsenide; Indium phosphide; JFETs; Optical device fabrication; Optical transmitters; Optoelectronic devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147461
Filename
147461
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