DocumentCode :
3552590
Title :
Implantation damage in InP: thermal stability effects
Author :
Goltzené, A. ; Meyer, B. ; Schwab, C.
Author_Institution :
Univ. Louis Pasteur, Strasbourg, France
fYear :
1991
fDate :
8-11 Apr 1991
Firstpage :
664
Lastpage :
667
Abstract :
The decay of fast-neutron-induced Vp and P In defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450°C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the PIn0%+ midgap level is observed
Keywords :
Fermi level; III-V semiconductors; annealing; indium compounds; ion beam effects; ion implantation; neutron effects; paramagnetic resonance of defects; vacancies (crystal); 450 C; Fermi level pinning; III-V semiconductor; InP; electron paramagnetic resonance; fast neutron induced damage; ion implantation damage simulation; lattice damage removal; optimum temperature; thermal isochronal anneals; thermal stability effects; Annealing; Electrons; Heat treatment; Indium phosphide; Lattices; Monitoring; Neutrons; Paramagnetic resonance; Temperature; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
Type :
conf
DOI :
10.1109/ICIPRM.1991.147462
Filename :
147462
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3552590
بازگشت