Title :
InAlAs/InxGa1-xAs HIGFETs (x⩾0.53) for E/D FET logic applications
Author :
Chan, Yi-Jen ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The design of InAlAs/InxGa1-xAs (x⩾0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (gm ,K) and microwave (fT, fmax) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was μ=12890 cm2/V-s, gm=438 mS/mm, fT=27 GHz. Orientation effects indicate a Vth shift up to -0.128 V and a very small gm variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; insulated gate field effect transistors; integrated logic circuits; 27 GHz; 438 mS; DC characteristics; E/D FET logic applications; HIGFET operation; InAlAs-InxGa1-xAs; depletion-mode; enhancement mode; heterostructure insulated-gate FETs; lattice-matched; microwave characteristics; selective ion implantation; strained channel designs; Annealing; Buffer layers; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic; Strain control; Temperature; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147465
