• DocumentCode
    3552596
  • Title

    Orthorhombic distortion of mismatched InxGa1-xAs/InP heterostructures

  • Author

    Bennett, Brian R. ; del Alamo, Jesus A.

  • Author_Institution
    MIT, Cambridge, MA, USA
  • fYear
    1991
  • fDate
    8-11 Apr 1991
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    Thin, mismatched epilayers tetragonally distort to form coherent interfaces. Beyond the critical thickness, misfit dislocations relieve strain. The dislocations form in an asymmetric pattern on (001) zinc-blende substrates. It is shown that this results in a change of crystal symmetry from tetragonal to orthorhombic for partially relaxed, mismatched InxGa1-xAs epilayers in either tension or compression on InP. This distortion is detected by both double-crystal X-ray diffraction and ellipsometry
  • Keywords
    III-V semiconductors; X-ray diffraction examination of materials; dislocation structure; ellipsometry; gallium arsenide; indium compounds; interface structure; semiconductor epitaxial layers; semiconductor junctions; InxGa1-xAs-InP; InP substrates; coherent interfaces; critical thickness; crystal symmetry; double-crystal X-ray diffraction; ellipsometry; misfit dislocations; mismatched epilayers; semiconductors; strain; zinc-blende substrates; Anisotropic magnetoresistance; Capacitive sensors; Distortion measurement; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Reflection; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1991., Third International Conference.
  • Conference_Location
    Cardiff
  • Print_ISBN
    0-87942-626-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1991.147468
  • Filename
    147468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552596