Title :
Orthorhombic distortion of mismatched InxGa1-xAs/InP heterostructures
Author :
Bennett, Brian R. ; del Alamo, Jesus A.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
Thin, mismatched epilayers tetragonally distort to form coherent interfaces. Beyond the critical thickness, misfit dislocations relieve strain. The dislocations form in an asymmetric pattern on (001) zinc-blende substrates. It is shown that this results in a change of crystal symmetry from tetragonal to orthorhombic for partially relaxed, mismatched InxGa1-xAs epilayers in either tension or compression on InP. This distortion is detected by both double-crystal X-ray diffraction and ellipsometry
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; dislocation structure; ellipsometry; gallium arsenide; indium compounds; interface structure; semiconductor epitaxial layers; semiconductor junctions; InxGa1-xAs-InP; InP substrates; coherent interfaces; critical thickness; crystal symmetry; double-crystal X-ray diffraction; ellipsometry; misfit dislocations; mismatched epilayers; semiconductors; strain; zinc-blende substrates; Anisotropic magnetoresistance; Capacitive sensors; Distortion measurement; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Reflection; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147468
