Characteristics and thoery of a silicon carbide P+-I-N photodiode

Silicon carbide diffused junction photodiodes have been fabricated for operation in either the photovoltaic or reverse bias mode. These diodes were fabricated in a manner similar to that described previously, but through the use of advanced techniques improved properties were obtained. Forward impedances as low as 8 × 10⁴ohms and 4 × 10⁴ohms were obtained at 30°C. and 500°C., respectively. Rise times of 10 to 100 microseconds were measured at 30°C. with a slight decrease at 500°C. Peak response wavelengths as short as 2700 A were obtained. When operated in the reverse bias mode, the reverse current of these diodes increases by 5 to 6 orders of magnitude under ultraviolet illumination.