DocumentCode
3552676
Title
Alloyed InAs microwave backward diodes
Author
Hopkins, J.B.
Volume
13
fYear
1967
fDate
1967
Firstpage
84
Lastpage
86
Abstract
The many advantages (zero bias, low 1.o. power, low noise, etc.) of backward diodes for microwave and millimeter wave detectors and mixers are significantly offset by their capacity. This limitation can be considerably reduced by the selection of a semiconductor with carriers of small effective mass and band gap with consequent high tunneling probability, permitting the use of small-area (low capacity) junctions. Indium arsenide is a logical choice.
Keywords
Alloying; Diodes; Fabrication; Frequency; Germanium; Microwave devices; Microwave theory and techniques; Performance loss; Physics; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1967 International
Type
conf
DOI
10.1109/IEDM.1967.187842
Filename
1474923
Link To Document