Abstract :
The many advantages (zero bias, low 1.o. power, low noise, etc.) of backward diodes for microwave and millimeter wave detectors and mixers are significantly offset by their capacity. This limitation can be considerably reduced by the selection of a semiconductor with carriers of small effective mass and band gap with consequent high tunneling probability, permitting the use of small-area (low capacity) junctions. Indium arsenide is a logical choice.
