Surface oriented GaAs Gunn oscillators and Schottky barrier diodes

The use of surface oriented Gunn oscillators and Schottky barrier diodes provides a means of obtaining improved device operation as well as optimum applications in microwave and millimeter wave integrated circuits. This is the result of selective epitaxial depositions of high purity single crystal GaAs with various concentrations into semi-insulating GaAs substrates. Electrical isolation between devices is provicted by the high-resistivity ( ohm-cm) substrates, eliminating the difficulties previously encountered in obtaining isolation with dielectrics, back-etching, p-n junctions, etc. This monolithic integrated circuit approach thus allows for better microwavc performance from the devices since parasitics are reduced to a minimum.