DocumentCode :
3552719
Title :
High density field emitting semiconductor cathode
Author :
Utsumi, Takao ; Dalman, Conrad G.
Author_Institution :
Cornell University, Ithaca, N. Y.
Volume :
13
fYear :
1967
fDate :
1967
Firstpage :
122
Lastpage :
122
Abstract :
This paper describes a new high density field emitting cathode which has possible applications in electron guns for cathode-ray tubes, display tubes and other electronic devices. On the surface of the cathode is a large array of micron size electron emitting projections which have been generated initially by an electronic forming method and maintained during operation by a regenerative process. The number density of the emitting centers is many orders of magnitude larger than that attainable in conventional field emission cathodes. Densities as high as 50,000 centers per sq. cm have been achieved with relative ease and higher densities appear feasible. To date up to 100 hours of life have been obtained with a germanium cathode at a current density of 0.5 amps/cm2. Densities as high as 1.0 amp/cm2have been achieved-from an emitting area 0.1 cm × 0.1 cm square of germanium and silicon.
Keywords :
Capacitors; Cathode ray tubes; Displays; Electron beams; Electron emission; Electron guns; Electron optics; Electron tubes; Germanium; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1967 International
Type :
conf
DOI :
10.1109/IEDM.1967.187882
Filename :
1474963
Link To Document :
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