A space charge-connected high-voltage lateral SCR with asymmetric polarity characteristics

A novel device design is described whereby the phenomenon of punch-through, normally an undesired effect between different active elements in a semiconductor, is employed as an intentional voltage- and polarity-dependent connection between several separate areas of the same element in order to achieve certain asymmetric polarity characteristics. Although this means of connection is applicable to many devices, a high voltage lateral SCR for electroluminescent driver applications will be described, in which several auxiliary anodes are arrayed annularly about the central gate-cathode structure. Ohmic connection is made to only one of these, the remaining areas to be connected by space charge extension during reverse bias.