DocumentCode :
3552740
Title :
Near ideal metal-semiconductor barriers
Author :
Lepselter, M.P. ; Sze, Simon M.
Volume :
13
fYear :
1967
fDate :
1967
Firstpage :
140
Lastpage :
140
Abstract :
Metal-semiconductor barriers which exhibit near ideal forward and reverse I-V characteristics have been fabricated. Typically, for a device with an area of 
cm2made on an n-type, oriented, 0.5 ohm-cm silicon substrate, the forward current at room temperature follows the expression 
over eight orders of magnitude in current with 
amp and n = 1.01. The breakdown voltage is 50 volts, in excellent agreement with the ideal breakdown voltage of p+n silicon junctions of the same n-type doping. The recovery time measured at 10 ma is less than 0.1 ns, the resolution of the measurement.
cm2made on an n-type, oriented, 0.5 ohm-cm silicon substrate, the forward current at room temperature follows the expression over eight orders of magnitude in current with amp and n = 1.01. The breakdown voltage is 50 volts, in excellent agreement with the ideal breakdown voltage of p+n silicon junctions of the same n-type doping. The recovery time measured at 10 ma is less than 0.1 ns, the resolution of the measurement.Keywords :
Conductors; Doping; Laboratories; Microwave oscillators; Rectifiers; Silicon; Switching converters; Telephony; Temperature; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1967 International
Type :
conf
DOI :
10.1109/IEDM.1967.187901
Filename :
1474982
Link To Document :
