DocumentCode :
3552765
Title :
Boron-nitride high-power duplexing devices
Author :
DeCamp, E.E., Jr. ; True, R.M. ; Edwards, E.V.
Author_Institution :
U. S. Army Electronics Command, Fort Monmouth, N. J.
Volume :
13
fYear :
1967
fDate :
1967
Firstpage :
158
Lastpage :
158
Abstract :
The design of the cylindrical pre-TR is a compromise between the amount of power than can be safely absorbed by the window and the low-level insertion loss. Once the low-level insertion loss and recovery time of a duplexer have been fixed, the feasibility of the device depends on dissipating the heat generated in the plasma discharge without exceeding the critical temperature of the dielectric user to contain the gas.
Keywords :
Boron; Dielectric losses; Dielectric materials; Ferrites; Insertion loss; Packaging; Plasma applications; Plasma devices; Plasma temperature; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1967 International
Type :
conf
DOI :
10.1109/IEDM.1967.187923
Filename :
1475004
Link To Document :
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