DocumentCode :
3552767
Title :
A high power electron beam switched P-N junction
Author :
McArtney, J. ; Ake, N.
Volume :
13
fYear :
1967
fDate :
1967
Firstpage :
160
Lastpage :
160
Abstract :
A development program has resulted in an interesting high power pulse amplifier which is essentially an electron beam multiplier and is referred to as an EBM. The device consists of a silicon diode mounted on a heat sink, and an electron gun enclosed in an evaluated envelope. The gun and diode are arranged so that pulsed 20 KV electrons can be focused on to the central active portion of the diode.
Keywords :
Anodes; Diodes; Electron beams; Electron tubes; Frequency; Microwave devices; Optical harmonic generation; P-n junctions; Power generation; Pulse amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1967 International
Type :
conf
DOI :
10.1109/IEDM.1967.187925
Filename :
1475006
Link To Document :
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