• DocumentCode
    3552829
  • Title

    Complementary bipolar transistors for monolithic structures

  • Author

    Oberlin, D.W.

  • Author_Institution
    Fairchild Semiconductor Research and Development Laboratory, Palo Alto, Calif.
  • Volume
    14
  • fYear
    1968
  • fDate
    1968
  • Firstpage
    20
  • Lastpage
    20
  • Abstract
    A technique is described by which it is now possible to fabricate completely complementary PNP/NPN transistors in a monolithic structure. Until now it has not been possible to make PNP devices with high fTand good hFEin a monolithic structure which are compatible with NPN devices. Both the NPN and PNP transistors have parameters which are identical to those obtained with discrete transistors.
  • Keywords
    Bipolar transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1968 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1968.187947
  • Filename
    1475472
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552829