Complementary bipolar transistors for monolithic structures

A technique is described by which it is now possible to fabricate completely complementary PNP/NPN transistors in a monolithic structure. Until now it has not been possible to make PNP devices with high fTand good hFEin a monolithic structure which are compatible with NPN devices. Both the NPN and PNP transistors have parameters which are identical to those obtained with discrete transistors.