• DocumentCode
    3552831
  • Title

    Complementary MOS-bipolar structure

  • Author

    Lin, H.C. ; Iyer, R.R. ; Ho, C.T.

  • Volume
    14
  • fYear
    1968
  • fDate
    1968
  • Firstpage
    22
  • Lastpage
    24
  • Abstract
    Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency.
  • Keywords
    Aluminum oxide; Bipolar integrated circuits; Bipolar transistors; Conductivity; Dielectric substrates; Insulation; MOSFETs; Plasma devices; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1968 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1968.187949
  • Filename
    1475474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552831