• DocumentCode
    3552863
  • Title

    High voltage integrated circuits

  • Author

    Camenzind, H.R. ; Polata, B. ; Kocsis, J.

  • Author_Institution
    Signetics Corp., Sunnyvale, Calif.
  • Volume
    14
  • fYear
    1968
  • fDate
    1968
  • Firstpage
    48
  • Lastpage
    48
  • Abstract
    Silicon monolithic integrated circuits have been developed with a voltage capability (LVCEO) in excess of 300 volts. Novel process, device and circuit design techniques have been combined to achieve this voltage capability at a high yield. The design approach, integration and performance of three linear integrated circuits will be discussed: a video amplifier for direct connection to a TV picture tube, a gain block designed to extend the output voltage swing of operation amplifiers to ± 100 volts and a voltage regulator operating in the range from 10 to 300 volts.
  • Keywords
    Analog integrated circuits; Circuit synthesis; Integrated circuit yield; Monolithic integrated circuits; Operational amplifiers; Performance gain; Regulators; Silicon; TV; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1968 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1968.187977
  • Filename
    1475502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552863