Low storage Schottky barrier diode transistors

Nongold doped transistors can exhibit low storage times if they are prevented from going into heavy saturation. A Schottky barrier diode placed across the collector-base junction can be used to control transistor storage times. Such a device is referred to as a Schottky barrier diode transistor (SBDT). This paper discusses the effects on storage time and saturation voltage of variations in the design of SBDT´s.