DocumentCode
3552866
Title
Low storage Schottky barrier diode transistors
Author
Aldrich, R.A.
Volume
14
fYear
1968
fDate
1968
Firstpage
50
Lastpage
50
Abstract
Nongold doped transistors can exhibit low storage times if they are prevented from going into heavy saturation. A Schottky barrier diode placed across the collector-base junction can be used to control transistor storage times. Such a device is referred to as a Schottky barrier diode transistor (SBDT). This paper discusses the effects on storage time and saturation voltage of variations in the design of SBDT´s.
Keywords
Aluminum; Circuit topology; Geometry; Gold; Logic circuits; Research and development; Schottky barriers; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1968 International
Type
conf
DOI
10.1109/IEDM.1968.187980
Filename
1475505
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