Title :
High speed, high voltage NPN core driver transistor for hybrid technology
Author :
Gates, H.R. ; Gokhale, B.V.
Author_Institution :
International Business Machines Corporation, Hopewell Junction, N. Y.
Abstract :
A transistor capable of switching 1.2 amp in less than 10 ns has been developed for application in Memory drive circuits packaged using hybrid technology. The transistor was designed in glassed-chip form for high volume automatic handling, testing, and mounting equipment. One of the design goals was achievement of reliability without additional hermetic seals.
Keywords :
Driver circuits; Voltage;
Conference_Titel :
Electron Devices Meeting, 1968 International
DOI :
10.1109/IEDM.1968.187999
