DocumentCode
3552890
Title
Two-dimensional numerical analysis of integrated bipolar transistors
Author
Collins, T.W.
Volume
14
fYear
1968
fDate
1968
Firstpage
74
Lastpage
76
Abstract
Numerical techniques are applied to analyze the complete integrated transistor including the emitter, base and collector. Continuity relationships for electrons and holes and expressions for electron and hole mobility are solved in two dimensions, to obtain the electron and hole densities and current density vectors throughout the complete device. Boundary conditions for contacts, surfaces, and isolation regions are also included.
Keywords
Bipolar transistors; Charge carrier processes; Computerized monitoring; Diodes; Electron mobility; Equations; Numerical analysis; Spontaneous emission; Time sharing computer systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1968 International
Type
conf
DOI
10.1109/IEDM.1968.188003
Filename
1475528
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