Title :
Visible narrow-band DC electroluminescence
Author_Institution :
U. S. Army Electronics Command, Fort Monmouth, N. J.
Abstract :
The need of low-voltage de electroluminescent devices that emit in the visible portion of the spectrum is well-recognized. Devices composed of p-n junctions of binary or ternary III-V semiconductors exhibit high injection-efficiency but have poor internal quantum-efficiency, particularly in the green where the eye-response is the greatest. Furthermore, the all-important consideration of contrast as a criterion for display-effectiveness makes luminescence in a narrow visible band all the more useful. Such narrow-bandedness is not present in a nonlasing mode of a III-V device.
Keywords :
Electroluminescence; Narrowband;
Conference_Titel :
Electron Devices Meeting, 1968 International
DOI :
10.1109/IEDM.1968.188025