Abstract :
We wish to report the development of SiC backward diodes, to our knowledge the first devices of this kind. The diodes are fabricated by alloying at 2100° Si to α-SiC doped with Al (1020cm-3) in a nitrogen atmosphere. Following lead attachment we reduce the junction area by electrolytic etching. A typical I-V characteristic shows a conduction knee at a few tenths of a volt in the high-conduction (tunnel) direction, and a "reverse" (injection) current of the order of 10 mA at two volts for a junction area of about 10-5cm2.
