DocumentCode
3552929
Title
A thin-film diode strain sensor
Author
Moore, R. Max
Volume
14
fYear
1968
fDate
1968
Firstpage
112
Lastpage
114
Abstract
A new type of thin-film strain sensor has been conceived. This sensor is a p-n heterojunction diode utilizing polycrystalline semiconductor layers obtained by vacuum evaporation onto an insulating substrate. The device exhibits large shifts in its forward I-V characteristic when subjected to a mechanical strain, and thus functions as a low output impedance voltage source.
Keywords
Capacitive sensors; Heterojunctions; Impedance; Insulation; Mechanical sensors; Semiconductor diodes; Semiconductor thin films; Sensor phenomena and characterization; Substrates; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1968 International
Type
conf
DOI
10.1109/IEDM.1968.188040
Filename
1475565
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