Title :
A thin-film diode strain sensor
Abstract :
A new type of thin-film strain sensor has been conceived. This sensor is a p-n heterojunction diode utilizing polycrystalline semiconductor layers obtained by vacuum evaporation onto an insulating substrate. The device exhibits large shifts in its forward I-V characteristic when subjected to a mechanical strain, and thus functions as a low output impedance voltage source.
Keywords :
Capacitive sensors; Heterojunctions; Impedance; Insulation; Mechanical sensors; Semiconductor diodes; Semiconductor thin films; Sensor phenomena and characterization; Substrates; Thin film sensors;
Conference_Titel :
Electron Devices Meeting, 1968 International
DOI :
10.1109/IEDM.1968.188040
