• DocumentCode
    3552957
  • Title

    A microwave Schottky-barrier field-effect transistor

  • Author

    Drangeid, K.E. ; Middlehoek, S. ; Mohr, T.H. ; Wolf, P.

  • Author_Institution
    IBM Zurich Research Laboratory, Zurich, Switzerland
  • Volume
    14
  • fYear
    1968
  • fDate
    1968
  • Firstpage
    140
  • Lastpage
    140
  • Abstract
    A silicon FET with a maximum frequency of oscillation fmaxof 10 GHz has been realized. Prime factor for the good microwave properties of the device is a newly designed gate which consists of a Schottky contact with a width of only 1 micron. This very small structure is made with the projection masking technology. The Schottky contact consists of evaporated Cr and Ni layers. Source and drain contacts are of the alloyed Au-Sb type. The channel is a thin epitaxial n-layer (d ≈ 0.2µ ρ ≈ 0.1 ohm-cm) on a high-resistive Si substrate.
  • Keywords
    Electrons; Microwave FET integrated circuits; Microwave devices; Microwave integrated circuits; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1968 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1968.188065
  • Filename
    1475590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3552957