DocumentCode :
3553005
Title :
A photosensitive readout array for optical memories
Author :
Assour, J.M.
Volume :
15
fYear :
1969
fDate :
1969
Firstpage :
26
Lastpage :
26
Abstract :
A monolithic photosensitive array has been developed for readout of digital patterns stored in holographic optical memories. To achieve large capacity, fast readout, and high optical sensitivity the photosensor array is word-organized with 256 photocells arranged in a 16 words × 16 bits-per-word configuration. The individual photocell consists of a silicon P+N-N+photodiode as a sensor and a pair of p-channel metal-oxide-semiconductor field-effect transistors as switching elements. The photodiodes have a common cathode. Their anodes are connected to the source electrodes of the MOS devices. The gate electrodes of the MOS devices in a photocell are used as a pair of complementary address lines to select a word, whereas the drain electrodes represent digit lines. This configuration has been realized with a simple, reliable, and inexpensive process using low-temperature doped silicon oxide diffusions.
Keywords :
Cathodes; Electrodes; FETs; Holographic optical components; Holography; MOS devices; Optical arrays; Optical sensors; Photodiodes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1969 International
Type :
conf
DOI :
10.1109/IEDM.1969.188090
Filename :
1475971
Link To Document :
بازگشت