Title :
A three-mask bipolar integrated circuit structure
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N. J.
Abstract :
A new bipolar integrated circuit structure has been fabricated which compares very favorably to MOS structures and other low power bipolar structures in terms of fabrication simplicity and performance. The new structure is basically a modified isolated lateral transistor and requires only three photolithographic masking operations for its entire fabrication.
Keywords :
Bipolar integrated circuits; Fabrication; Isolation technology; Laboratories; Low voltage; Propagation delay; Resistors; Silicon; Substrates; Telephony;
Conference_Titel :
Electron Devices Meeting, 1969 International
DOI :
10.1109/IEDM.1969.188097
