DocumentCode
3553012
Title
A three-mask bipolar integrated circuit structure
Author
Glinski, V.J.
Author_Institution
Bell Telephone Laboratories, Murray Hill, N. J.
Volume
15
fYear
1969
fDate
1969
Firstpage
34
Lastpage
34
Abstract
A new bipolar integrated circuit structure has been fabricated which compares very favorably to MOS structures and other low power bipolar structures in terms of fabrication simplicity and performance. The new structure is basically a modified isolated lateral transistor and requires only three photolithographic masking operations for its entire fabrication.
Keywords
Bipolar integrated circuits; Fabrication; Isolation technology; Laboratories; Low voltage; Propagation delay; Resistors; Silicon; Substrates; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188097
Filename
1475978
Link To Document