DocumentCode
3553015
Title
High performance ECL gates made by CDI and conventional methods
Author
Eckl, D.J. ; Konkle, K.H. ; Richardson, F.K. ; Idzik, S.A. ; Luce, R.L.
Author_Institution
Massachusetts Institute of Technology, Lexington, Mass.
Volume
15
fYear
1969
fDate
1969
Firstpage
36
Lastpage
36
Abstract
High performance integrated ECL gates with stage delays in the nanosecond and subnanosecond regions have been fabricated with conventional and collector diffused isolation (CDI) methods (1). These two fabrication techniques are compared on the basis of resulting circuit performance, circuit density, and laboratory yields.
Keywords
Circuit optimization; Delay; Fabrication; Integrated circuit yield; Laboratories;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188099
Filename
1475980
Link To Document