DocumentCode
3553019
Title
A lumped model characterizing domain phenomena in bulk GaAs
Author
Robrock, R.B., II
Author_Institution
Bell Telephone Laboratories, Holmdel, N. J.
Volume
15
fYear
1969
fDate
1969
Firstpage
40
Lastpage
40
Abstract
The phenomenon of domain propagatipn in n-GaAs has been studied by several authors who have digitally simulated a distributed model for the bulk material. These simulations entail the determinatin of electric field and carrier distributions in one-dimensional samples from continuity and transport expressions and the Poisson equation. As a complement to this technique, a need exists for a lumped device model to serve as a tool in the design of circuits incorporating these elements.
Keywords
Circuits; Diodes; Doping profiles; Gallium arsenide; Iris; Predictive models; Semiconductor process modeling; Shape; Steady-state; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188103
Filename
1475984
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