A lumped model characterizing domain phenomena in bulk GaAs

The phenomenon of domain propagatipn in n-GaAs has been studied by several authors who have digitally simulated a distributed model for the bulk material. These simulations entail the determinatin of electric field and carrier distributions in one-dimensional samples from continuity and transport expressions and the Poisson equation. As a complement to this technique, a need exists for a lumped device model to serve as a tool in the design of circuits incorporating these elements.