Dielectric-surface-loaded GaAs bulk devices

So far most of the work on GaAs bulk devices seems to have been concentrated on a configuration of bare GaAs with two ohmic contacts, which is essentially based on a one-dimensional effect. The purpose of this paper is to introduce new physical phenomena, electrical characteristics and device performances of a dielectric-surface-load GaAs bulk device. Theory and experimental results are given, which are based on a two-dimensional effect and exhibit unique functions.