An MNS light sensitive memory element

This paper describes an MNS device that performs the functions of both light detection and memory. It is based on the previously described variable, threshold MNS FET (1). It Will be shown, that under the proper conditions the rate at which the FET gate is charged with a writing pulse of given amplitude depends upon the intensity of the illumination incident on the device. Therefore, in an array of such devices selective illumination of certain regions during the writing cycle will implement charge storage, while in the nonilluminated area writing will be inhibited. Thus this behavior is immediately applicable to image and character storage, and can provide a direct optical input to a memory array.