• DocumentCode
    3553027
  • Title

    Gate protection of MIS devices

  • Author

    Lenzlinger, M.

  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    48
  • Lastpage
    50
  • Abstract
    Gate shorts caused by electrical breakdown of the gate oxide are a major yield and reliability problem for MOS transistors and integrated circuits. Generally, diodes or diffused resistors with breakdown voltages of about 50 V are used to protect the gate from high voltage transients or discharges.
  • Keywords
    Current density; Electric breakdown; Electromigration; MIS devices; MOSFETs; Protection; Read only memory; Resistors; Semiconductor diodes; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1969.188110
  • Filename
    1475991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553027