Title :
Gate protection of MIS devices
Abstract :
Gate shorts caused by electrical breakdown of the gate oxide are a major yield and reliability problem for MOS transistors and integrated circuits. Generally, diodes or diffused resistors with breakdown voltages of about 50 V are used to protect the gate from high voltage transients or discharges.
Keywords :
Current density; Electric breakdown; Electromigration; MIS devices; MOSFETs; Protection; Read only memory; Resistors; Semiconductor diodes; Temperature;
Conference_Titel :
Electron Devices Meeting, 1969 International
DOI :
10.1109/IEDM.1969.188110
