Title :
Recombination-generation currents at a SiO2-Si interface
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
The surface recombination-generation current in planar devices has already been extensively studied especially with gated diode structures. This current exhibits a peak as a function of the gate voltage, whose height in particular has been discussed by Rosier, and by Fitzgerald and Grove.
Keywords :
Diodes; Voltage;
Conference_Titel :
Electron Devices Meeting, 1969 International
DOI :
10.1109/IEDM.1969.188135
