• DocumentCode
    3553054
  • Title

    Recombination-generation currents at a SiO2-Si interface

  • Author

    Whelan, M V

  • Author_Institution
    Philips Research Laboratories, Eindhoven, Netherlands
  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    76
  • Lastpage
    76
  • Abstract
    The surface recombination-generation current in planar devices has already been extensively studied especially with gated diode structures. This current exhibits a peak as a function of the gate voltage, whose height in particular has been discussed by Rosier, and by Fitzgerald and Grove.
  • Keywords
    Diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1969.188135
  • Filename
    1476016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553054