Fabrication of vertical PNP´s NPN´s, and N-channel epitaxial JFET´s in a monolithic substrate

It is possible to build high performance PNP´s NPN´s, and N-channel epitaxial JFET´s in dielectrically isolated material. The material is double poly type DI, made from P type substrates, into which N⁺buried layers are diffused in NPN islands. A N type epitaxial layer which is the top layer in the finished material, is deposited on the P substrate.