Title :
A new technology for high power monolithic IC
Author :
Kobayashi, Ichiro
Abstract :
The paper describes a newly developed fabrication technology for a monolithic linear power IC of new construction based on a level process in the epitaxial crystal growth on the silicon substrate. A power capability far beyond known in this field has been achieved. A typical example of the output power rating for an IC designed for use in a low frequency SEPP type power amplifier is 20 watts rms continuous service, and the total harmonic distortion content is less than 8% at 1 kHz. at 40 volts source voltage, with a circuit efficiency of 69%. (Saturated continuous output is 26 watts.)
Keywords :
Fabrication; Frequency; Monolithic integrated circuits; Paper technology; Power amplifiers; Power generation; Power integrated circuits; Silicon; Substrates; Total harmonic distortion;
Conference_Titel :
Electron Devices Meeting, 1969 International
DOI :
10.1109/IEDM.1969.188142
