DocumentCode
3553064
Title
Characteristics of burst (popcorn) noise in transistors and operational amplifiers
Author
Hsu, S.T. ; Whittier, R.J.
Author_Institution
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, Calif.
Volume
15
fYear
1969
fDate
1969
Firstpage
86
Lastpage
88
Abstract
In its simplest form, burst noise has a waveform of bistable levels similar to that of microplasma noise in p-n junctions. However, the amplitude of the noise pulse is generally much lower and the pulse width much larger than those of microplasma noise. Burst noise, when present, completely dominates the low-frequency noise power of a semiconductor device, causing it to become several orders of magnitude larger than that of a device free from this type of noise. Thus, burst noise can be a leading factor in determining the economics of low-noise transistor and operational amplifier fabrication.
Keywords
Low-frequency noise; Low-noise amplifiers; Noise level; Operational amplifiers; P-n junctions; Power generation economics; Pulse amplifiers; Semiconductor device noise; Semiconductor devices; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1969 International
Type
conf
DOI
10.1109/IEDM.1969.188144
Filename
1476025
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