• DocumentCode
    3553064
  • Title

    Characteristics of burst (popcorn) noise in transistors and operational amplifiers

  • Author

    Hsu, S.T. ; Whittier, R.J.

  • Author_Institution
    Fairchild Semiconductor Research and Development Laboratory, Palo Alto, Calif.
  • Volume
    15
  • fYear
    1969
  • fDate
    1969
  • Firstpage
    86
  • Lastpage
    88
  • Abstract
    In its simplest form, burst noise has a waveform of bistable levels similar to that of microplasma noise in p-n junctions. However, the amplitude of the noise pulse is generally much lower and the pulse width much larger than those of microplasma noise. Burst noise, when present, completely dominates the low-frequency noise power of a semiconductor device, causing it to become several orders of magnitude larger than that of a device free from this type of noise. Thus, burst noise can be a leading factor in determining the economics of low-noise transistor and operational amplifier fabrication.
  • Keywords
    Low-frequency noise; Low-noise amplifiers; Noise level; Operational amplifiers; P-n junctions; Power generation economics; Pulse amplifiers; Semiconductor device noise; Semiconductor devices; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1969 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1969.188144
  • Filename
    1476025