DocumentCode :
3553107
Title :
Negative resistance diode power amplification
Author :
Hines, M.E.
Author_Institution :
Microwave Associates, Burlington, Mass.
Volume :
15
fYear :
1969
fDate :
1969
Firstpage :
134
Lastpage :
134
Abstract :
The purpose of this paper is to provide a basic design theory for negative-resistance diodes microwave power amplification. The model is a shunt-loaded reflection amplifier. The analysis includes both quasi-linear mode and the locked-oscillator mode of operation.
Keywords :
Diodes; Electrons; Frequency conversion; Laser mode locking; Microwave theory and techniques; Physics; Power generation; Radio frequency; Radiofrequency amplifiers; Reflection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1969 International
Type :
conf
DOI :
10.1109/IEDM.1969.188184
Filename :
1476065
Link To Document :
بازگشت