Abstract :
Gold doping is a well known method of improving the recovery characteristics of switching diodes and transistors, yet the detailed behavior of these important devices is not well known, due to the complicated trapping action of gold in silicon. The purpose of this paper is to give the results of an experimental and theoretical investigation of gold doped silicon p+n diodes, relating their circuit performance, particularly capacitance variation with frequency and bias, to the internal distributions of recombination rate, trapped charge, current and voltage.
