Crosspoint switch and memory cell

A new type of memory cell circuit is described. The circuit is unique in that four modes of operation are possible making it especially useful for communication systems, and it can be made in a very small size. The unit cell of the memory was assembled and tested using discrete components followed by a careful study of the integration of the circuit into a silicon substrate. A test of scanning electron microscope fabrication was carried out under computer control to draw the patterns for 50 × 60 µ cells. Some partially operating circuits were achieved.