Detailed modeling of nonlinear distortion in bipolar transistors

Nonlinear distortion in a bipolar transistor amplifier is calculated using a new compact model to represent the transistor. Nonlinear distortion is particularly important for transistor applications in long-haul analog communications repeater amplifiers. In that case the internally generated output powers at the second and third harmonics relative to the power at the fundamental frequency should be as small as possible, The compact model is capable of predicting with any desired sensitivity the experimentally observed second- and third-order distortion coefficients.