DocumentCode :
3553194
Title :
Comparison of X-band Gunn oscillator characteristics with silicon and GaAs IMPATTS
Author :
Turlington, T.R.
Volume :
16
fYear :
1970
fDate :
1970
Firstpage :
52
Lastpage :
52
Abstract :
X-band Gunn oscillators and silicon and gallium arsenide IMPATTS are commercially available; each ihas its particular set of operating characteristics. Often, applications engineers are unaware of subtle differences between these oscillators differences that, depending on use, could cause considerable difficulty with power-supply oscillation or excessive system noise.
Keywords :
Gallium arsenide; Gunn devices; Oscillators; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1970 International
Type :
conf
DOI :
10.1109/IEDM.1970.188247
Filename :
1476359
Link To Document :
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