DocumentCode
3553197
Title
The operation of kilowatt LSA oscillators
Author
Berry, J.D. ; Woodard, D.W. ; Eastman, L.F.
Volume
16
fYear
1970
fDate
1970
Firstpage
54
Lastpage
54
Abstract
New high power LSA results have produced over 2000 watts of peak power at over 10% efficiency in C-band from a single chip. Such results were made possible by recent breakthroughs in circuit analysis, and with the production of extremely uniform epitaxial layers of uo to 250 µm in thickness. Over 60% of the devices from such a wafer yielded in excess of 500 watts in similar operation.
Keywords
Circuit analysis; Electric breakdown; Epitaxial layers; Heat sinks; Impedance; Oscillators; Production; RLC circuits; Shape; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1970 International
Type
conf
DOI
10.1109/IEDM.1970.188249
Filename
1476361
Link To Document